AUIRF5210S Datasheet, PDF (4/10 Pages) International Rectifier – Advanced Planar Technology P-Channel MOSFET

100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRF5210S
12.0
ID= -23A
10.0
8.0
VDS= -80V
VDS= -50V
VDS= -20V
6.0
4.0
2.0
0.0
0
25 50 75 100 125 150
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
TJ = 25°C
10
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-VSD, Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
1msec
10msec
100
-VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2015-9-30