 English |
|
|
|
|
|
|
|
| AUIRF5210S Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Planar Technology P-Channel MOSFET | |||
| |||
| ◁ |
AUIRF5210S
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100
âââ
âââ
-2.0
9.5
âââ
âââ
âââ
âââ
âââ
-0.11
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
60
-4.0
âââ
-50
-250
-100
100
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
mïï ï VGS = -10V, ID = -38A ï
V VDS = VGS, ID = -250µA
S VDS = -50V, ID = -23A
µA
VDS = -100V, VGS = 0V
VDS = -80V,VGS = 0V,TJ =125°C
nA
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
âââ 150 230
âââ 22 33
âââ 81 120
âââ 14 âââ
âââ 63 âââ
âââ 72 âââ
âââ 55 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 2780 âââ
âââ 800 âââ
âââ 430 âââ
ID = -23A
nC VDS = -80V
VGS = -10Vï
VDD = -50V
ns
ID = -23A
RG= 2.4ïï
VGS = -10V ï
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
pF VDS = -25V
Æ = 1.0MHz, See Fig. 5
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ïï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ -38
âââ âââ -140
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
âââ âââ -1.6 V TJ = 25°C,IS = -23A,VGS = 0V ïï
âââ 170 260 ns TJ = 25°C ,IF = -23A, VDD = -25V
âââ 1180 1770 nC di/dt = -100A/µs ïï ï
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
ï Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25ï, IAS = -23A.(See Fig.12)
ïï ISD ï£ï -23A, di/dt ï£ï -650A/µs, VDD ï£ï V(BR)DSS, TJ ï£ 150°C.
ï Pulse width ï£ï 300µs; duty cycle ï£ 2%.
ï
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
ï Rï± is measured at TJ of approximately 90°C.
2
2015-9-30
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese