PTFB181702FC Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB181702FC
Typical Performance (cont.)
CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 1.3 A, ƒ = 1880 MHz
21
60
20 _Gain
50
19
40
18
30
17
20
-10 °C
16
+25 °C
10
+85 °C
15
b181702fc-g4
0
37 39 41 43 45 47 49 51 53
Output Power (dBm)
CW
Gain vs. Output Power
V_DD = 28 V, ƒ = 1880 MHz
20.5
20.0
19.5
I_DQ = 1.6 A
I_DQ = 1.3 A
19.0
18.5
18.0
I_DQ = 1.0 A
17.5
b181702fc-g6
37 39 41 43 45 47 49 51 53
Output Power (dBm)
Broadband Circuit Impedance
Frequency
MHz
1805
1825
1845
1865
1880
Z Source W
R
jX
2.99
–6.14
2.99
–6.08
3.00
–6.03
3.00
–5.97
3.00
–5.94
Z Load W
R
jX
1.87
–4.46
1.52
–4.50
1.35
–4.34
1.25
–4.19
1.20
–4.08
Z Source
G1
G2
D1 ^{Z Load}
S
D2
Data Sheet
4 of 8
Rev. 02.1, 2016-06-10