PTFB181702FC Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB181702FC
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 650 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 170 W CW)
Ordering Information
Type and Version
PTFB181702FC V1 R0
PTFB181702FC V1 R250
Order Code
PTFB181702FCV1R0XTMA1
PTFB181702FCV1R250XTMA1
Symbol
V(_BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.5
—
Typ
—
—
—
0.11
3.0
—
Max
—
1
10
—
3.5
1
Unit
V
µA
µA
W
V
µA
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.27
Unit
V
V
°C
°C
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.1, 2016-06-10