PTFB181702FC Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB181702FC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1.3 A,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
1880 Lower
-20
1880 Upper
1842.5 Lower
-25
1842.5 Upper
-30
1805 Lower
1805 Upper
-35
-40
-45
-50
-55
b181702fc-g1
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Two-tone Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 1.3 A,
ƒ₁ = 1880 MHz, ƒ₂ = 1879 MHz
-20
-30
-40
IM3
-50
-60
IM5
-70
-80
38
IM7
b181702fc-g5
41 43 46 48 51 53
Output Power, PEP (dBm)
Single-carrier Broadband Performance
V_DD = 28 V, I_DQ = 1.3 A, P_OUT = 80 W,
3GPP WCDMA signal, PAR = 10 dB
21
48
20
47
19
Gain
46
18
45
17
44
16
43
15
1690
1730
Efficiency
1770 1810 1850 1890
Frequency (MHz)
b181702fc-g2
42
1930 1970
Single-carrier Broadband Performance
V_DD = 28 V, I_DQ = 1.3 A, P_OUT = 80 W,
3GPP WCDMA signal, PAR = 10 dB
-4
-10
-6
-15
Return Loss
-8
-20
-10
-25
-12
ACPR
-30
-14
-35
-16
b181702fc-g3
-40
1690 1730 1770 1810 1850 1890 1930 1970
Frequency (MHz)
Data Sheet
3 of 8
Rev. 02.1, 2016-06-10