PTFB181702FC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB181702FC
Thermally-Enhanced High Power RF LDMOS FET
170 W, 28 V, 1805 – 1880 MHz
Description
The PTFB181702FC is a 170-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications. Features
include input and output matching, high gain and thermally-enhanced
package with earless flanges. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PTFB181702FC
Package H-37248-4
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1.3 A,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
20
50
19
40
Gain
18
30
17
20
16
15
34
1805 MHz
1842.5 MHz
10
1880 MHz
Efficiency
b181702fc-gc
0
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Features
• Broadband internal matching
• Typical CW performance, 1842 MHz, 28 V
- Output power at P_1dB = 180 W
- Efficiency = 58%
- Gain = 18.5 dB
• Capable of handling 10:1 VSWR @28 V, 170 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1300 mA, P_OUT = 30 W avg, ƒ₁ = 1870 MHz, ƒ₂ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
18
19
h_D
24
26
IMD
—
–35
Max
—
—
–33
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2016-06-10