PTFA071701E Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz

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Typical Performance (cont.)
2-Carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1.0 A, ƒ = 765 MHz
70
-25
60 ^{TCASE = 25°C}
-30
T_CASE = 90°C
50
IM3
-35
40
-40
30
-45
20
-50
ACPR
10
-55
Efficiency
0
-60
32 34 36 38 40 42 44 46 48
Output Power (dBm)
PTFA071701E
PTFA071701F
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
1.556 A
3.1 A
6.22 A
7.76 A
9.32 A
10.88 A
12.44 A
14 A
0
20
40
60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
725
736
748
759
770
G
S
Z Source Ω
R
jX
2.690
–3.730
2.680
–3.470
2.700
–3.240
2.720
–3.050
2.690
–2.890
Z Load Ω
R
jX
2.070
–1.27
2.020
–1.08
1.980
–0.84
1.930
–0.64
1.900
–0.46
Z₀ = 50 Ω
Z Load
725 MHz
0.1
770 MHz
Z Source
0. ²
Data Sheet
4 of 9
Rev. 03, 2009-11-11