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PTFA071701E Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz
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Thermally-Enhanced High Power RF LDMOS FETs
170 W, 725 – 770 MHz
Description
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs
designed for use in cellular power amplifiers in the 725 to 770 MHz
frequency band. Features include internal I/O matching, and
thermally-enhanced, ceramic open-cavity packages. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA071701E*
Package H-36248-2
PTFA071701F*
Package H-37248-2
PTFA071701E
PTFA071701F
Two-tone Drive-up
VDD = 30 V, IDQ = 900 m A,
ƒ = 765 MHz, tone spacing = 1 MHz
-20
-25
-30
IM3
-35
-40
IM5
-45 Efficiency
-50
-55
-60
IM7
-65
44
46
48
50
52
Output Power, PEP (dBm)
60
55
50
45
40
35
30
25
20
15
54
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 770 MHz, 30 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
• Typical CW performance, 770 MHz, 30 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
170 W (CW) output power
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average,
ƒ1 = 760, ƒ2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps
—
18.5
—
dB
ηD
—
32
—
%
ACPR
—
–36
—
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2009-11-11