PTFA071701E Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 – 770 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA071701E
PTFA071701F
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 0.9 A, ƒ = 770 MHz
21
65
20
55
19 _Gain
45
18
35
17
25
16
15
30
Efficiency
35
40
45
50
Output Power (dBm)
15
5
55
Broadband Performance
V_DD = 30 V, I_DQ = 900 mA, P_OUT = 75 W
50
0
45
-5
Efficiency
40
-10
35
-15
Return Loss
30
-20
25
-25
Gain
20
-30
15
700
730
760
Frequency (MHz)
-35
790
CW Performance at Selected Voltages
I_DQ = 0.9 A, ƒ = 770 MHz
64
60
56
52
48
44
40
36
48
Gain
Efficiency
V_DD = 32 V
V_DD = 30 V
V_DD = 28 V
49
50
51
52
Output Power (dBm)
21
20
19
18
17
16
15
14
53
21
20
19
18
17
16
15
30
Power Sweep
V_DD = 30 V, ƒ = 770 MHz
I_DQ = 1.3 A
I_DQ = 1.1 A
I_DQ = 0.9 A
I_DQ = 0.7 A
35
40
45
50
55
Output Power (dBm)
Data Sheet
3 of 9
Rev. 03, 2009-11-11