PTF210901 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

PTF210901
Typical Performance (cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 1050 mA, f = 2140 MHz, P_{OUT = 90 W PEP,}
tone spacing = 1 MHz
45
-5
40
-10
Drain Efficiency
35
-15
30
-20
25
-25
IM3
20
-30
15
-35
10
Gain
-40
5
-45
0
-50
22 24 26 28 30 32 34
Drain Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.02
7.50 A
9.00 A
1.01
6.00 A
1.00
4.50 A
0.99
3.00 A
1.50 A
0.98
0.97
0.96
-20
5
30
55
80
105
Case Temperature (ºC)
Broadband Circuit Impedance Data
Z Source
D
Z Load
G
S
Frequency
MHz
2070
2110
2140
2170
2200
Z Source Ω
R
jX
5.11
–7.00
4.78
–6.74
4.57
–6.50
4.35
–6.30
4.12
–6.11
Z Load Ω
R
jX
2.14
0.62
2.03
0.97
1.99
1.21
1.92
1.45
1.88
1.67
Data Sheet
4
Z₀ = 50 Ω
Z Load
2200 MHz
2070 MHz
Z Source
0.1 _{2200 MHz}
2070 MHz
0.2
2004-01-16