PTF210901 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

PTF210901
Electrical Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_D = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1050 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 90 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Typical Performance in broadband test fixture
Min Typ
65
—
—
—
—
0.1
2.5
3.2
—
0.01
Max
—
1.0
—
4.0
1.0
Value
65
–0.5 to +12
200
389
2.22
–40 to +150
0.45
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Broadband Circuit Performance
V_DD = 28 V, I_DQ = 1050 mA, P_OUT = 20 W CW
40
35
30
25
20
Gain
15
10
5
2080
Ef f iciency
Input Return Loss
2120
2160
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
-35
2200
Power Sweep, Pulsed Conditions
V_DD = 28 V, I_DQ = 1050 mA, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
55
54 _{P-3dB = 51.3 dBm}
53
Ideal
52
P-1dB = 50.6 dBm
51
50
49
Actual
48
47
46
45
30 31 32 33 34 35 36 37 38 39 40
Input Power (dBm)
Data Sheet
2
2004-01-16