PTF210901 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

PTF210901
LDMOS RF Power Field Effect Transistor
90 W, 2110–2170 MHz
Description
Features
The PTF210901 is an internally matched 90 W GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 1050 mA, f₁ = 2140 MHz, f₂ = 2150 MHz,
3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW
-25
30
Drain Efficiency
-30
25
IM3
-35
20
-40
-45
Gain
-50
15
10
ACPR
-55
5
39
40
41
42
43
44
Output Power, Avg. (dBm)
• Internal matching for wideband performance
• Typical two–carrier 3GPP WCDMA
performance
- Average output power = 19 W at –37 dBc
- Efficiency = 25%
• Typical CW performance
- Output power at P–1dB = 105 W
- Gain = 15 dB
- Efficiency = 53%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR at 28 V,
90 W (CW) output power
PTF210901E
Package 30248
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Performance at T_CASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1050 mA, P_OUT = 19 W AVG
f₁ = 2140 MHz, f₂ = 2150 MHz, 3GPP signal, channel bandwidth 3.84 MHz, 8.0 dB peak/average @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol Min Typ
IMD
—
–37
G_ps
—
15
η_D
—
25
Max Units
—
dBc
—
dB
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1050 mA, P_OUT = 90 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
13.5
15
36
38
—
–30
Max
—
—
–28
Units
dB
%
dBc
Data Sheet
1
2004-01-16