PTF210901 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for selected currents
V_DD = 28 V, f = 2140 MHz, tone spacing = 1 MHz
-20
-25
-30
0.75 A
-35
0.85 A
-40 ^{1.15 A}
-45
-50
-55
0.95 A
-60
-65
1.05 A
37 39 41 43 45 47 49 51
Output Power (dBm), PEP
PTF210901
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V, I_DQ = 1050 mA, P_OUT = 90 W PEP,
f = 2140 MHz
-20
-25
-30
3rd Order
-35
-40
5th Order
-45
-50
-55
7th Order
-60
0
10
20
30
Tone Spacing (MHz)
Two–Tone Drive–Up
V_DD = 28 V, I_DQ = 1050 mA, f = 2140 MHz,
tone spacing = 1 MHz
45
40
35
30
25 ^Efficiency
20
15
10
5
0
39 41 43
IM3
45 47
-20
-25
-30
-35
-40
IM5 _-45
-50
IM7 ^-55
-60
-65
49 51
Output Power (dBm), PEP
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 1050 mA, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67%
clipping, P/A R = 8.7 dB, 3.84 MHz BW
30
-30
Drain Efficiency
25
-35
20
-40
15
-45
Gain
10
-50
ACPR Up
5
-55
ACPR Low
0
-60
34 35 36 37 38 39 40 41 42 43 44
Output Power (dBm), Avg.
Data Sheet
3
2004-01-16