PTF210451 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

PTF210451
Typical Performance (cont.)
IM3, Gain & Drain Efficiency vs. Supply Voltage
I_DQ = 500 mA, f = 2140 MHz, P_OUT = 44.75 dBm (PEP),
Tone Spacing = 1 MHz
0
50
-5
-10
-15
-20 _{IM3 Up}
-25
-30
-35
-40
45
Efficiency ₄₀
35
30
25
20
Gain
15
10
5
-45
0
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.02
4.50 A
3.75 A
1.01
3.00 A
1.00
2.25 A
0.99
1.50 A
0.75 A
0.98
0.97
0.96
-20
5
30
55
80
105
Case Temperature (ºC)
Broadband Circuit Impedance Data
Z Source
D
Z Load
G
S
Frequency
MHz
2070
2110
2140
2170
2210
Z Source Ω
R
jX
5.72
-9.36
5.17
-8.97
4.88
-8.52
4.59
-8.16
4.08
-7.79
Z Load Ω
R
jX
4.94
-0.87
4.90
-0.69
4.96
-0.60
4.96
-0.49
4.88
-0.39
Z₀ = 50 Ω
Z Load
2210 MHz
2070 MHz
0.1
Z Source
2210 MHz
2070 MHz
0.2
0.3
Data Sheet
4
2003-12-22