PTF210451 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

PTF210451
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_D = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 500 mA
V_GS = 10 V, V_DS = 0 V
Symbol Min Typ
V_(BR)DSS
65
—
I_DSS
—
—
R_DS(on)
—
0.2
V_GS
2.5
3.2
I_GSS
—
—
Max
—
1.0
—
4.0
1.0
Units
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 45 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
175
1.0
–40 to +150
1.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Typical Performance (data taken in production test fixture)
Broadband Performance
V_DD = 28 V, I_DQ = 500 mA, P_OUT = 40 dBm
30
25
Ef f iciency
20
15
Gain
10
5
0
2070
Input Retrun Loss
2105
2140
2175
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
2210
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 500 mA, f = 2170 MHz
17
60
Ef f iciency
16
50
15
40
Gain
14
30
13
20
12
10
34 36 38 40 42 44 46 48
Output Power (dBm)
Data Sheet
2
2003-12-22