PTF210451 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for selected currents
V_DD = 28 V, f = 2140 MHz, tone spacing = 1 MHz
-30
-35
-40
0.60 A
-45
0.40 A
-50
-55 _{0.45 A}
0.50 A
0.55 A
-60
34 36 38 40 42 44 46 48
Output Power, PEP (dBm)
PTF210451
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V, I_DQ = 500 mA, f = 2140 MHz,
P_OUT = 45 W PEP
-25
-30 _{3rd Order}
-35
-40 5th Order
-45
-50 _{7th Order}
-55
-60
0
10
20
30
40
Tone Spacing (MHz)
Two–Tone Drive–Up
V_DD = 28 V, I_DQ = 500 mA, f = 2140 MHz,
tone spacing = 1MHz
-25
45
-30
40
Ef f iciency
-35
35
-40
30
-45
25
IM3
-50
20
-55
IM5
-60
15
IM7
10
-65
5
34 36 38 40 42 44 46 48
Peak Output Power (dBm)
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, Test Model 1 w/16 DPCH, 67% clipping,
P/A R = 8.7 dB, 3.84 MHz BW
-35
30
Ef f iciency
-40
25
-45
20
-50
-55
-60
30
15
ACPR Up ₁₀
ACPR Low
5
32 34 36 38 40 42
Avgerage Output Power (dBm)
Data Sheet
3
2003-12-22