PTF210451 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

PTF210451
LDMOS RF Power Field Effect Transistor
45 W, 2110–2170 MHz
Description
The PTF210451 is a 45 W internally matched GOLDMOS FET
intended for WCDMA applications from 2110 to 2170 MHz. Full gold
metallization ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive-Up
V_DD = 28 V, I_DQ = 500 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
30
Ef f icienc y
-35
25
-40
20
A CPR
-45
IM3
15
-50
10
Features
• Internal matching for wideband performance
• Typical two–carrier WCDMA performance
- Average output power = 11.5 W
- Gain = 14 dB
- Efficiency = 27%
- IM3 = –37 dBc
• Typical CW performance
- Output power at P–1dB = 50 W
- Linear gain = 14 dB
- Efficiency = 53%
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability
• Low HCI Drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
-55
5
30 32 34 36 38 40 42
Average Output Power (dBm)
PTF210451E
Package 30265
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Performance at T_CASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 500 mA, P_OUT = 11.5 W AVG
f₁ = 2140 MHz, f₂ = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol Min Typ
IMD
—
–37
G_ps
—
14
η_D
—
27
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 500 mA, P_OUT = 45 W PEP, f = 2170 MHz, Tone Spacing = 1 MHz
Max Units
—
dBc
—
dB
—
%
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
13
14
35
38
—
–32
Max
—
—
–30
Units
dB
%
dBc
Data Sheet
1
2003-12-22