PTF210301 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

PTF210301
Typical Performance (cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 380 mA, f = 2140 MHz, Tone Spacing = 1 MHz,
Output Power (PEP) = 44.75 dBm
-10
45
-15
40
Ef f iciency
-20
35
-25
30
IM3 Up
-30
25
-35
20
-40
Gain 15
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.02
1.01
1.00
0.20
0.77
0.99
1.33
0.98
1.90
2.47
0.97
3.03
0.96
0.95
-20
20
60
100
Case Temperature (°C)
Broadband Circuit Impedance Data
Z Source
D
Z Load
Frequency
MHz
2070
2110
2140
2170
2210
G
S
Z Source Ω
R
jX
12.6
–4.3
13.5
–3.8
14.2
–3.6
15.0
–3.6
16.1
–3.7
Z Load Ω
R
jX
5.5
–5.7
5.1
–5.4
4.8
–4.9
4.4
–4.6
4.0
–4.3
Z₀ = 50 Ω
Z Load
2210 MHz
0.1
Z Source
2070 MHz
2210 MHz
2070 MHz
0.2
3
Data Sheet
4
2003-12-22