PTF210301 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

PTF210301
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 380 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T_CASE = 70°C, 30 W CW)
PTF210301A
PTF210301E
PTF210301A
PTF210301E
Symbol
V_DSS
V_GS
T_J
P_D
P_D
T_STG
R_θJC
R_θJC
Typical Performance (data taken in a production test fixture)
Min Typ
65
—
—
—
—
0.26
2.5
3.2
—
—
Max
—
1.0
—
4
1.0
Value
65
–0.5 to +12
200
116
0.67
145
0.83
–40 to +150
1.5
1.2
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Broadband Performance
V_DD = 28 V, I_DQ = 380 mA, P_OUT = 39.5 dBm
35
0
30
Ef f iciency
25
-5
Return Loss -10
20
-15
15 ^Gain
-20
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 380 mA, f = 2170 MHz
18
55
Ef f iciency
17
45
16
35
Gain
15
25
14
15
10
-25
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
13
0
5
10
20
30
40
Output Power (W)
Data Sheet
2
2003-12-22