PTF210301 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

PTF210301
LDMOS RF Power Field Effect Transistor
30 W, 2110–2170 MHz
Description
Features
The PTF210301 is a 30 W, internally matched GOLDMOS FET intended
for WCDMA applications from 2110 to 2170 MHz. Full gold metallization
ensures excellent device lifetime and reliability.
Two–Carrier WCDMA Drive–Up
f = 2140 MHz, 3GPP WCDMA Signal, P/A R = 8 dB,
10 MHz Carrier Spacing, V_DD = 28 V, I_DQ = 380 mA
-25
30
Ef f ic ienc y
-30
25
-35
20
-40
IM3
15
-45
10
• Broadband internal matching
• Typical two–carrier WCDMA performance
- Average output power = 7.0 W
- Gain = 16 dB
- Efficiency = 25%
- IM3 = –37 dBc
• Typical CW performance
- Output power at P–1dB = 36 W
- Gain = 15 dB
- Efficiency = 53%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
30 W (CW) output power
-50
5
ACPR
-55
0
30
32
34
36
38
40
Average Output Power (dBm)
PTF210301A
Package 20265
PTF210301E
Package 30265
RF Characteristics at T_CASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 380 mA, P_OUT = 36.5 dBm
f₁ = 2140 MHz, f₂ = 2150 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol Min Typ
IMD
G_ps
h_D
—
–44
—
16
—
20
Max Units
—
dBc
—
dB
—
%
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 380 mA, P_OUT = 9 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
η_D
IMD
14.5
16
15
18
—
–47
ESD: Electrostatic discharge sensitive device — observe handling precautions!
Data Sheet
1
Max
—
—
–42
Units
dB
%
dBc
2003-12-22