PTF210301 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, f = 2140 MHz, Tone Spacing = 1 MHz
-25
-30
455 mA
-35 _{420 mA}
-40
-45
-50
-55
-60
32
300 mA
345 mA
380 mA
34 36 38 40 42 44 46
Output Power, PEP (dBm)
PTF210301
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28V I_DQ = 380 mA, f = 2140 MHz,
Output Power = 44.75 dBm PEP
-25
-30
-35 _{3rd Order}
-40
-45 _5th
-50
-55 7th
-60
-5
5
15
25
35
Tone Spacing (MHz)
Two–Tone Drive–Up at Optimum I_DQ
V_DD = 28 V, I_DQ = 380 mA,
f = 2140 MHz, Tone Spacing = 1 MHz
-20
45
-25
Ef f iciency
IM3 ⁴⁰
-30
35
-35
IM5 ³⁰
-40
25
-45
20
-50
15
IM7
-55
10
-60
5
-65
0
32
36
40
44
48
Output Power, PEP (dBm)
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 380 mA, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
Clipping, P/A R = 8.7 dB, 3.84 MHz BW
-35
30
Ef f iciency
-40
20
-45
ACPR Up
-50
10
ACPR Low
-55
-60
28
0
32
36
40
Average Output Power (dBm)
Data Sheet
3
2003-12-22