PTF180101M Datasheet, PDF (4/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz

PTF180101M
Typical Performance (cont.)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.05
0.28
0.51
0.74
0.97
1.2
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
1900
1910
1920
1930
1940
1950
1960
1970
1980
1990
2000
Data Sheet
G
S
Z Source Ω
R
jX
0.80
-3.71
0.79
-3.66
0.79
-3.61
0.78
-3.56
0.77
-3.51
0.77
-3.47
0.76
-3.42
0.75
-3.37
0.75
-3.33
0.74
-3.28
0.74
-3.24
Z Load Ω
R
jX
2.89
-1.38
2.88
-1.30
2.87
-1.21
2.85
-1.13
2.84
-1.05
2.82
-0.97
2.81
-0.89
2.80
-0.81
2.78
-0.73
2.77
-0.65
2.76
-0.57
4 of 8
Z₀ = 50 Ω
Z Load _{2000 MHz}
1900 MHz
Z Source
2000 MHz
1900 MHz
0.1
0.2 _{Rev. 05.1, 2009-02-18}