PTF180101M Datasheet, PDF (1/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz

PTF180101M
High Power RF LDMOS Field Effect Transistor
10 W, 1.0 – 2.0 GHz
Description
The PTF180101M is an unmatched 10-watt GOLDMOS ^® FET intended for
class AB base station applications in the 1 to 2 GHz band. This LDMOS
device offers excellent gain, efficiency and linearity performance in a small
footprint.
PTF180101M
Package PG-RFP-10
EDGE Performance
V_DD = 28v, I_DQ = 180 mA, ƒ = 1960 MHz
1.50
40
1.25
30
1.00 Efficiency
20
0.75
10
EVM
0.50
0
29 30 31 32 33 34 35 36 37
Output Power (dBm)
Features
• Typical EDGE performance
- Average output power = 4.0 W
- Gain = 17 dB
- Efficiency = 31%
- EVM = 1.3 %
• Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 16 dB
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
16.5
—
η_D
35
—
IMD
—
—
Max
—
—
–28
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 05.1, 2009-02-18