PTF180101M Datasheet, PDF (2/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz

PTF180101M
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 180 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 10 W DC )
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
150
18.8
0.15
–40 to +150
6.5
Ordering Information
Type
PTF180101M
Package Outline
PG-RFP-10
Package Description
Molded plastic, SMD
Marking
0181
Unit
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
*See Infineon distributor for future availability.
Data Sheet
2 of 8
Rev. 05.1, 2009-02-18