PTF180101M Datasheet, PDF (3/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz

PTF180101M
Typical Performance (data taken in production test fixture)
CW Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 1960 MHz
20
19
18
Gain
17
16
15 _Efficiency
14
15
20 25 30 35 40
Power Output (dBm)
60
50
40
30
20
10
0
45
Two-Tone Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 1960/1961 MHz
-20
-30
-40
-50
-60
-70
-80
-90
25
70
3rd order
60
5th order ₅₀
40
7th order 30
Efficiency ²⁰
10
0
30
35
40
45
Output Power (dBm), PEP
P–1dB Broadband Performance
V_DD = 28 V, I_DQ = 180 mA
20
15
10
5
0
-5
-10
-15
-20
-25
1920
60
Gain
Efficiency ₅₀
40
Input Return Loss
1940
1960
1980
Frequency (MHz)
30
2000
EDGE Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 1960 MHz
Offset f = 200 kHz
-30
-35
-40
-45
-50
-55
-60
Offset ƒ = 400 kHz
-65
Offset ƒ = 600 kHz
-70
-75
29 30 31 32 33 34 35 36 37
Output Power (dBm)
Data Sheet
3 of 8
Rev. 05.1, 2009-02-18