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| BFS17W_11 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor | |||
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Total power dissipation Ptot = Æ(TS)
BFS17W
Permissible Pulse Load RthJS = Æ(tp)
320
mW
10 3
K/W
240
10 2
200
160
120
80
40
0
0 15 30 45 60 75 90 105 120 °C 150
TS
Permissible Pulse Load
Ptotmax/PtotDC = Æ(tp)
10 3
-
D=0
10 2
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
0.5
0.2
10 1
0.1
0.05
0.02
0.01
0.005
D=0
10
0
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Collector-base capacitance Ccb = Æ(VCB)
Emitter-base capacitance Ceb = Æ(VEB)
f = 1 MHz
1.2
pF
1
0.9
0.8
0.7
CEB
0.6
0.5
CCB
0.4
0.3
0.2
0.1
0
0 2 4 6 8 10 12 14 16 V 20
VCB, VEB
4
2011-07-20
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