BFS17W_11 Datasheet, PDF (1/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
• Pb-free (RoHS compliant) package
BFS17W
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS17W
Marking
Pin Configuration
MCs
1=B
2=E
3=C
Package
SOT323
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, f = 10 MHz
Total power dissipation¹⁾
T_S ≤ 93 °C
Junction temperature
Ambient temperature
V_CEO
V_CBO
V_EBO
I_C
I_CM
P_tot
T_J
T_A
15
25
2.5
25
50
280
150
-65 ... 150
Storage temperature
T_Stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
≤ 205
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
mA
mW
°C
Unit
K/W
1
2011-07-20