BFS17W_11 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFS17W
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
Collector-base cutoff current
V_CB = 10 V, I_E = 0
V_CB = 25 V, I_E = 0
Emitter-base cutoff current
V_EB = 2.5 V, I_C = 0
DC current gain
I_C = 2 mA, V_CE = 1 V, pulse measured
I_C = 25 mA, V_CE = 1 V, pulse measured
Collector-emitter saturation voltage
I_C = 10 mA, I_B = 1 mA
V_(BR)CEO ¹⁵
-
-V
I_CBO
I_EBO
µA
-
- 0.05
-
-
10
-
-
100
h_FE
V_CEsat
-
40
- 150
20 70
-
-
0.1 0.4 V
2
2011-07-20