BFS17W_11 Datasheet, PDF(3/7 Page) Infineon Technologies AG

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BFS17W_11 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

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BFS17W

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

min. typ.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 2 mA, VCE = 5 V, f = 200 MHz

IC = 25 mA, VCE = 5 V, f = 200 MHz

1.4

1.3 2.5

Collector-base capacitance

VCB = 5 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

- 0.55

max.

0.8

Unit

GHz

Collector emitter capacitance

VCE = 5 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

0.3

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

0.9 1.45

Minimum noise figure

IC = 2 mA, VCE = 5 V, ZS = 50 â¦,

f = 800 MHz

NFmin

3.5

5 dB

Transducer gain

IC = 20 mA, VCE = 5 V, ZS = ZL = 50â¦,

f = 500 MHz

|S21e|2

- dB

Third order intercept point at output

VCE = 5 V, IC = 20 mA, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

1dB compression point

IC = 20 mA, VCE = 5 V, ZS = ZL = 50â¦,

f = 800 MHz

IP3

- 22.5 - dBm

P-1dB

2011-07-20

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