BFP460 Datasheet, PDF (4/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
0.7
pF
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8 10 V
14
V_CB
Transition frequency f_T= ƒ(I_C)
f = 1 GHz
V_CE = parameter in V
24
GHz
3-4V
2V
20
18
1V
16
14
12
10
8
6
4
0
10
20
30
40 mA
60
I_C
BFP460
Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1800MHz -
33
dBm
29
27
25
23
21
19
17
15
13
11
9
7
5
0
4V
3V
2V
1V
10
20
30
40 mA 55
I_C
Power gain G_ma, G_ms, |S₂₁|² = ƒ (f)
V_CE = 3 V, I_C = 20 mA
50
dB
40
35
30
25
Gms
20
15 |S21|²
10
Gma
5
0
0
1
2
3
4 GHz
6
f
4
Jun-14-2004