BFP460 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFP460
NPN Silicon RF Transistor*
3
4
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• Excellent ESD performance
• High f_T of 22 GHz
* Short-term description
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFP460
Marking
Pin Configuration
ABs
1 = E 2 = C 3 = E 4=B -
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0 °C
T_A ≤ 0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾²⁾
T_S ≤ 100°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point³⁾
R_thJS
1_{Ptot due to Maximum Ratings}
2_{TS is measured on the collector lead at the soldering point to the pcb}
3For _{calculation of RthJA please refer to Application Note Thermal Resistance}
Package
-
SOT343
Value
Unit
V
4.5
4.2
15
15
1.5
50
mA
5
200
mW
150
°C
-65 ... 150
-65 ... 150
Value
Unit
≤ 250
K/W
1
Jun-14-2004