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BFP460 Datasheet, PDF (2/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFP460
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5
5.8
-V
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0,5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3 V, pulse measured
ICBO
IEBO
hFE
-
-
100 nA
-
-
1 µA
90 120 160 -
2
Jun-14-2004
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