BFP460 Datasheet, PDF (3/5 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFP460
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 30 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 3 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
C_ce
V_CE = 3 V, f = 1 MHz, base grounded
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz, collector grounded
16 22
-
- 0.32 0.45
- 0.28 -
- 0.55 -
Noise figure
F
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
f = 1.8 GHz
-
1.1
-
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
f = 3 GHz
- 1.35 -
Unit
GHz
pF
dB
Power gain, maximum stable¹⁾
I_C = 20 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 20 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 3 GHz
Transducer gain
I_C = 20 mA, V_CE = 3 V, Z_S = Z_L = 50Ω,
f = 1,8 GHz
I_C = 20 mA, V_CE = 3 V, Z_S = Z_L = 50Ω ,
f = 3 GHz
G_ms
- 17.5 - dB
G_ma
- 12.5 - dB
|S_21e|²
dB
-
15
-
- 10.5 -
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 20 mA, f = 1.8 GHz
1dB Compression point at output
I_C = 20 mA, V_CE = 3 V, f = 1.8 GHz
IP₃
-
P_-1dB
-
1_{Gma = |S21 / S12| (k-(k²-1)}1/2_{), Gms = S21 / S12}
2IP3 _{value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
27.5
11.5
- dBm
-
3
Jun-14-2004