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TLE7824G Datasheet, PDF (37/53 Pages) Infineon Technologies AG – Integrated double low-side switch, high-side/LED driver, hall supply, wake-up inputs and LIN communication with embedded MCU (24kB Flash)
TLE7824G
General Product Characteristics
Table 14 Electrical Characteristics (cont’d)
VS = 13.5 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
16.4.17 Output current limit
ICCmax
45
–
200 mA VCC = 4.5 V;
power transistor thermally
monitored
16.4.18 Drop voltage
VDR
VDR = VS - VCC
16.4.19 VCC thermal prewarning TjPW
ON temperature
–
–
0.3 V
1 mA < ICC < 45 mA;
3.9 V < VS < 5.1 V
120 145 170 °C 1)
16.4.20 VCC thermal prewarning TjPW_hys
–
hysteresis
10
–
K
1)
16.4.21 VCC thermal shutdown
TjSD
temperature
155 185 200 °C 1)
16.4.22 VCC thermal shutdown
TjSD_hys
20
35
–
hysteresis
K
1)
16.4.23 VCC ratio of SD to PW
temp.
TjSD/TjPW
–
1.25 –
–
1)
Under-/Overvoltage Detection @ Vbat_sense Pin
16.4.24 Undervoltage Threshold VUVT_Vbat 7.1
7.65 8.2
V
“ramp-up”
indicated within SPI output
word; LED Driver turned
off
16.4.25 Undervoltage Threshold VUVT_Vbat 6.8
“ramp-down”
16.4.26 Undervoltage Threshold VUVT_Vbat_hys –
hysteresis
7.25 7.65 V
indicated within SPI output
word; LED Driver turned
off
400 –
mV 1)
16.4.27 Overvoltage Threshold
“ramp-up”
VOVT_Vbat
17.6 18.5 19.4 V
indicated within SPI output
word; LED Driver turned
off
16.4.28 Overvoltage Threshold
“ramp-down”
VOVT_Vbat
16.6 17.4 18.2 V
16.4.29 Overvoltage threshold
VOVT_Vbat_hys –
1.1 –
V
hysteresis
indicated within SPI output
word; LED Driver turned
off
1)
Undervoltage Detection @ VS Pin
16.4.30 Undervoltage threshold VUVT_Vs
5.8
“ramp-down”
16.4.31 Undervoltage threshold
hysteresis
VUVT_Vs_hys –
6.5 7.2
250 –
V
indicated within SPI output
word
mV 1)
SBC Oscillator
16.4.32 Internal cycling time
tCYL
3.2 3.9 4.8 μs internal oscillator
fOSC = 256 kHz (typ.)
Data Sheet
37
Rev. 3.01, 2008-04-15