BGA751N7 Datasheet, PDF (31/39 Pages) Infineon Technologies AG – SiGe Bipolar 3G/3.5G/4G Single-Band LNA

BGA751N7
SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Application Circuit and Block Diagram
3.3
800 MHz Band Application Circuit Schematic
RFIN
800 MHz
C1
3.3pF
VEN = 0 / 2.8 V
C2
100pF
L1
9.1nH
1
RFIN
2
VEN
Biasing & Logic
Circuitry
6
RFOUT
C3
8.2pF
L2
9.1nH
RFOUT
800 MHz
5
RREF
R _REF
5.6k ½
VGS = 0 / 2.8 V
3
VGS
7 GND
4
VCC
BGA751N7_Appl_BlD_Band_XX.vsd
Figure 4 Application Circuit with Chip Outline (top view)
Note: Package paddle (Pin 7) has to be RF grounded.
VCC = 2.8 V
C4
10nF
Table 15 Parts List
Part Number
Part Type
L1 ... L2
Chip inductor
C1 ... C4
Chip capacitor
RREF
Chip resistor
Manufacturer
Various
Various
Various
Size
0402
0402
0402
Comment
Wirewound, Q ≈ 50
Data Sheet
31
Revision 3.1, 2013-01-31