BGA751N7 Datasheet, PDF (10/39 Pages) Infineon Technologies AG – SiGe Bipolar 3G/3.5G/4G Single-Band LNA

2.4
DC Characteristics
BGA751N7
SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Electrical Characteristics
Table 4 DC Characteristics, T_A = 25 °C
Parameter
Symbol
Min.
Supply voltage
V_CC
2.6
Supply current high gain I_CCHG
–
mode
Supply current low gain
I_CCLG
–
mode
Supply current standby
mode
I_CCOFF
–
Logic level high
Logic level low
Logic currents
V_HI
1.4
V_LO
-0.2
I_LO
–
I_HI
–
Values
Typ.
2.8
3.3
Max.
3.0
–
0.5
–
0.1
2.0
2.8
–
0.0
0.5
–
0.1
5.0
6.0
2.5
Gain Mode Select Truth Table
Unit Note / Test Condition
V
–
mA Typical value without
reference resistor
mA
μA –
V
All logic pins
V
μA All logic pins
μA
Table 5 Truth Table
Control Voltage
State
All Bands
VEN
VGS
HG
LG
H
L
OFF
ON
H
H
L
L
ON
STANDBY¹⁾
OFF
L
H
1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode al-
though this is not mandatory. Details see section 2.4.
2.6
Switching Times
Table 6 Typical switching times; T_A = -30 ... 85 °C
Parameter
Symbol
Values
Min.
Typ.
Settling time gainstep
t_GS
–
1
Max.
–
Unit Note / Test Condition
μs Switching LG ↔ HG
Data Sheet
10
Revision 3.1, 2013-01-31