BGA751N7 Datasheet, PDF (13/39 Pages) Infineon Technologies AG – SiGe Bipolar 3G/3.5G/4G Single-Band LNA

BGA751N7
SiGe Bipolar 3G/3.5G/4G Single-Band LNA
Electrical Characteristics
2.9
Measured RF Characteristics 700 MHz Band
Table 7 Typical Characteristics 700 MHz Band, T_A = 25 °C, V_CC = 2.8 V, R_REF = 5.6 kΩ¹⁾²⁾
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Pass band range
700
750
MHz F.e. band 12 and 17
Current consumption
Gain
Reverse isolation
Noise figure
Input return loss
Output return loss
Stability factor
I_CCHG
–
I_CCLG
–
S_21HG
–
S_21LG
–
S_12HG
–
S_12LG
–
NF_HG
–
NF_LG
–
S_11HG
–
S_11LG
–
S_22HG
–
S_22LG
–
k
–
4.8
–
0.50
–
15.3
–
-9.9
–
-40
–
-9.9
–
1.1
–
9.9
–
-13
–
-14
–
-27
–
-19
–
>2.2
–
mA High gain mode
mA Low gain mode
dB High gain mode
dB Low gain mode
dB High gain mode
dB Low gain mode
dB High gain mode
dB Low gain mode
dB 50 Ω, high gain mode
dB 50 Ω, low gain mode
dB 50 Ω, high gain mode
dB 50 Ω, low gain mode
DC to 8 GHz; all gain
modes
Input compression point
IP_1dBHG –
-7
–
IP_1dBLG –
-12
–
Inband IIP3
IIP3_HG –
-8
–
f₁ - f₂ = 1 MHz
IIP3_LG
-2
1) Performance based on application circuit in Figure 3.1 on Page 29
2) Guaranteed by device design; not tested in production
dBm
dBm
dBm
High gain mode
Low gain mode
High gain mode
Low gain mode
Data Sheet
13
Revision 3.1, 2013-01-31