PTFB211503EFL Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (data taken in a production test fixture)
PTFB211503EL
PTFB211503FL
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 1.20 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-25
2170 Low
-30
2170 Up
2140 Low
-35
2140 Up
2110 Low
-40
2110 Up
-45
-50
-55
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Two-carrier WCDMA 3GPP
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84MHz
19
40
18
Gain
30
17
20
16
Efficiency
10
15
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Single-carrier WCDMA Drive-Up
V_DD = 30 V, I_DQ = 1.20 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8 dB, BW 3.84 MHz
-20
40
-25
35
-30
30
Efficiency
-35
25
-40
20
-45
ACP Up
15
-50
10
-55
ACP Low
5
-60
0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Single-carrier WCDMA, 3GPP Broadband
V_DD = 30 V, I_DQ = 1.20 A, P_OUT = 40 W
60
0
50
IRL
-10
40
Gain
-20
Efficiency
ACP
30
-30
20
-40
10
2080
2100
2120 2140 2160 2180
Frequency (MHz)
-50
2200
Data Sheet
3 of 14
Rev. 04.1, 2016-06-14