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PTFB211503EFL Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs | |||
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PTFB211503EL
PTFB211503FL
RF Characteristics (cont.)
Two-tone Measurement (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 150 W PEP, Æ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Gps
16.5
18
Drain Efficiency
hD
39
40
Intermodulation Distortion
IMD
â
â30
Max
â
â
â28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.2 A
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
â
â
â
1.6
â
Typ
â
â
â
0.08
2.1
â
Max
â
1.0
10.0
â
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 150 W CW)
Symbol Value
VDSS
VGS
TJ
TSTG
RqJC
65
â6 to +10
200
â40 to +150
0.27
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB211503EL V1 R0
PTFB211503EL V1 R250
PTFB211503FL V2 R0
PTFB211503FL V2 R250
Order Code
Package Description
PTFB211503ELV1R0XTMA1 H-33288-6, bolt-down
PTFB211503ELV1R250XTMA1 H-33288-6, bolt-down
PTFB211503FLV2R0XTMA1 H-34288-4/2, earless flange
PTFB211503FLV2R250XTMA1 H-34288-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 04.1, 2016-06-14
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