GTVA261701FA_15 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF GaN HEMT

GTVA261701FA
advance specification
Package Outline Specifications
Package H-37265J-2
45° X .64
[.025]
FLANGE
10.16
CL
[.400]
FLANGE
4X R0.63
[R.025] MAX
SPH 1.57
[.062]
1.02
[.040]
2X 6.35
[.250]
o ⁿ _D
c ^{a t i} _G
fi ^CL
2X 2.59±.51
[.102±.020]
LID
10.16±.25
(15.34
[.604])
[.400±.010]
c ⁱ 10.16±.25
[.400±.010]
e _{H-37265J-2_02_po_05-29-2015}
p_10.16
s_[.400]
3.61±.38
[.142±.015]
S
e _{Diagram Notes—unless otherwise specified:}
c _{1. Interpret dimensions and tolerances per ASME Y14.5M-1994.}
2. Primary dimensions are mm. Alternate dimensions are inches.
n_{3. All tolerances ± 0.127 [.005] unless specified otherwise.}
4. Pins: D – drain; G – gate; S – source.
a_{5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].}
v 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
d ^{Find the latest and most complete information about products and packaging at the Infineon Internet page}
a ^{http://www.infineon.com/rfpower}
Advance Specification
3 of 4
Rev. 01, 2015-05-29