GTVA261701FA_15 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF GaN HEMT

GTVA261701FA
advance specification
Thermally-Enhanced High Power RF GaN HEMT
170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P_3dB) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Features
• Input Matched
• Typical Pulsed CW performance, 2690 MHz, 48 V, single side
- Output power at P_3dB = 170 W
- Efficiency = 72%
- Gain = 16 dB
• GaN HEMT technology
• High power density
• High efficiency
• RoHS-compliant
Advance Specification Data
Sheets describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
GTVA261701FA
Package H-37265J-2
Target RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 48 V, I_DQ = 200 mA, P_OUT = 50 W avg, ƒ₁ = 2620 MHz, ƒ₂ = 2690 MHz, channel bandwidth = 3.84 MHz, peak/average
= 10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
—
18
—
dB
h_D
—
47
—
%
ACPR
—
–29
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-05-29