GTVA261701FA_15 Datasheet, PDF (2/4 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF GaN HEMT

GTVA261701FA
advance specification
DC Characteristics (measured on wafer prior to packaging)
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
V_GS = –8 V, I_D = 32 mA
V_(BR)DSS
150
—
—
V
Gate Threshold Voltage
V_DS = 10 V, I_D = 32 mA
V_GS(th)
–3.8
–3.0
–2.3
V
n _{Gate Quiescent Voltage}
V_DS = 50V, I_D = 1.0 A
V_GS(Q)
—
–2.8
—
V
o _{Saturated Drain Current}
V_DS = 6.0 V, V_GS = 2.0 V
I_DS
15
18
—
A
t ⁱ _{Maximum Ratings}
a _Parameter
c _{Drain-source Voltage}
fi ^{Gate-source Voltage}
i _{Operating Voltage}
Gate Current
c _{Drain Current}
e _{Junction Temperature}
p _{Storage Temperature Range}
s ^{Thermal Resistance}
Symbol
V_DSS
V_GS
V_DD
IG
Id
T_J
T_STG
R_qJC
Value
125
–10 to +2
0 to +50
20
7.5
225
–65 to +150
TBD
Unit
V
V
V
mA
A
°C
°C
°C/W
Ordering Information
e _{Type and Version}
c _{GTVA261701FA V1}
a ^{d v a n GTVA261701FA V1 R250}
Order Code
TBD
TBD
Package Description
H-37265J-2, earless flange
H-37265J-2,, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Advance Specification
2 of 4
Rev. 01, 2015-05-29