BFP740_15 Datasheet, PDF (23/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740
Electrical Characteristics
1
1.5
0.5
0.4
8.0
0.3
0.2
0.1
7.0 _7.0
6.0
6.0
5.0
5.0
4.0
10.0
2
9.0
9.0 ^10.0
8.0
0.03 to 10 GHz
3
4
5
10
0
−0.1
0.1 0.2 0.3 0.4 0.5
4.0
3.0
1 1.5 2 3 4 5
0.03
0.03
−10
−0.2
3.0
−0.3
−0.4
−0.5
2.0
1.0
2.0
−1
1.0
−2
−1.5
−5
−4
−3
6.0mA
15mA
Figure 5-15 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 6 / 15 mA
0.5
0.4
1
1.5
2
0.3
0.45 to 10 GHz
0.2
3.5 _2.4
0.1
4.5
1.9
1.5
0
0.1 0.2 0.3 0.4 0.5 5.5
4.5
3.5 ^2.4 1.9
1 1^1..⁵5
0.9
0.9
2 ^0.43⁵ 4 5
0.45
5.5
−0.1
8.0
8.0
−0.2
10.0
−0.3
−0.4
−0.5
10.0
−1
−2
−1.5
3
4
5
10
−10
−5
−4
−3
6mA
15mA
Figure 5-16 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 6 / 15 mA
Data Sheet
23
Revision 1.1, 2015-01-20