BFP740_15 Datasheet, PDF (20/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP740
Electrical Characteristics
25
20
15
10
24 ₂₅
5
19
22
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20
22 ²³²⁴
19
2021
1
1.5
2
2.5
3
3.5
4
V_CE [V]
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
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12
20
11
8
9
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10
15
7
6
10 ⁵
4
3
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1
0
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2
8
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1
0
2.5
9
3
V_CE [V]
8
7
6
5
4
3
2
1
0
−1
3.5
9
8
6
5
4
3
2
1
0
4
Figure 5-10 Compression Point at output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz
Data Sheet
20
Revision 1.1, 2015-01-20