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BFP740_15 Datasheet, PDF (17/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP740
Electrical Characteristics
102
101
100
10â1
10â2
10â3
10â4
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VBE [V]
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2 V
100
10â1
10â2
10â3
10â4
10â5
10â6
10â7
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VBE [V]
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
Data Sheet
17
Revision 1.1, 2015-01-20
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