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BFP740_15 Datasheet, PDF (18/28 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor
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BFP740
Electrical Characteristics
10−9
10−10
10−11
10−12
10−13
10−14
0.8
0.9
1
1.1
1.2
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
Data Sheet
18
Revision 1.1, 2015-01-20
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