HYS64T64020KM Datasheet, PDF (22/31 Pages) Infineon Technologies AG – Double-Data-Rate-Two SDRAM Micro-DIMM

HYS64T[3200/6402]0[H/K/L]M–[3.7/5]–A
Double-Data-Rate-Two SDRAM Micro-DIMM
Preliminary
Electrical Characteristics & AC Timings
Table 16 AC Timing - Absolute Specifications −5/−3.7¹⁾
Parameter
Symbol −3.7
−5
Unit Notes
PC2-4200M
Min.
Max.
Data Output hold time from DQS
t_QH
t_HP−t_QHS
—
Data hold skew factor
t_QHS
—
400
Active to Precharge command
t_RAS
45
70000
Active to Active/Auto-refresh
t_RC
60
—
command period
Active to Read or Write delay (with t_RCD
15
—
and without Auto-Precharge) delay
Average Periodic Refresh Interval t_REFI
—
7.8
—
3.9
Auto-refresh to Active/Auto-refresh t_RFC
105
—
command period
Precharge command period
Read preamble
Read postamble
Active bank A to Active bank B
command
t_RP
t_RPRE
t_RPST
t_RRD
15
0.9
0.40
10
—
1.1
0.60
—
Internal read to precharge command t_RTP
7.5
—
delay
Write preamble
t_WPRE
Write postamble
t_WPST
Write recovery time
t_WR
Internal write to read command delay t_WTR
Exit power down to any valid
command
t_XARD
(other than NOP or Deselect)
0.25
0.40
15
7.5
2
—
0.60
—
—
—
Exit active power-down mode to read t_XARDS 6 − AL
—
command (slew exit, lower power)
Exit precharge power-down to any t_XP
2
—
valid command (other than NOP or
Deselect)
Exit Self-Refresh to non-read
command
t_XSNR
t_RFC + 10
—
Exit Self-Refresh to read command t_XSRD 200
—
1) For details and notes see the relevant INFINEON component datasheet
2) CL = 3
3) CL = 4 & 5
4) 0 °C ≤ T_CASE ≤ 85 °C
5) 85 °C < T_CASE ≤ 95 °C
PC2-3200M
Min.
Max.
t_HP−t_QHS
—
—
450
45
70000
60
—
15
—
—
7.8
—
3.9
105
—
15
—
0.9
1.1
0.40
0.60
10
—
7.5
—
0.25
—
0.40
0.60
15
—
10
—
2
—
6 − AL
—
2
—
t_RFC + 10 —
200
—
t_CK
ps
ns
ns
ns
µs ⁴⁾
µs ⁵⁾
ns
ns
t_CK
t_CK
ns
ns
t_CK
t_CK
ns
ns
t_CK
t_CK
t_CK
ns
t_CK
Data Sheet
22
Rev. 0.6, 2004-06
03242004-2CBE-IJ2X