HYS64T64020KM Datasheet, PDF (17/31 Pages) Infineon Technologies AG – Double-Data-Rate-Two SDRAM Micro-DIMM

Preliminary
HYS64T[3200/6402]0[H/K/L]M–[3.7/5]–A
Double-Data-Rate-Two SDRAM Micro-DIMM
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 9 Absolute Maximum Ratings
Parameter
Symbol
Voltage on any pins relative to V_SS
V_IN, V_OUT
Voltage on V_DD relative to V_SS
V_DD
Voltage on V_DDQ relative to V_SS
V_DDQ
Storage Humidity (without condensation) H_STG
Values
Min.
– 0.5
– 1.0
– 0.5
5
Max.
2.3
2.3
2.3
95
Unit
V
V
V
%
Note/Test
Condition
1)
1)
1)
1)
1) Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability
Table 10 Operating Conditions
Parameter
Symbol
Values
Unit
Notes
min.
max.
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
T_OPR
T_CASE
T_STG
0
0
– 50
105
+65
+95
+100
69
°C
°C
°C
kPa
1)2)3)4)
5)
Operating Humidity (relative)
H_OPR
10
90
%
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. For
measurement conditions, please refer to the JEDEC document JESD51-2
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to t_REFI = 3.9 µs
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
85 °C Case Temperature before initiating Self-Refresh operation.
5) Up to 3000 m.
Table 11 Supply Voltage Levels and DC Operating Conditions
Parameter
Symbol Limit Values
Unit
min.
nom.
max.
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
V_DD
V_DDQ
V_REF
V_DDSPD
V_{IH (DC)}
V_{IL (DC)}
1.7
1.7
0.49 × V_DDQ
1.7
V_REF + 0.125
– 0.30
1.8
1.8
0.5 × V_DDQ
—
—
—
1.9
V
1.9
V
0.51 × V_DDQ V
3.6
V
V_DDQ + 0.3
V
V_REF – 0.125 V
1) Under all conditions, V_DDQ must be less than or equal to V_DD
2) Peak to peak AC noise on V_REF may not exceed ± 2% V_{REF (DC)}.V_REF is also expected to track noise in V_DDQ.
Notes
—
1)
2)
Data Sheet
17
Rev. 0.6, 2004-06
03242004-2CBE-IJ2X