PTFC270101M_16 Datasheet, PDF (21/22 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

PTFC270101M
Package Outline Specifications

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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.10 [0.004].
4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm.
5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization) – source.
6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
21 of 22
Rev. 04.1, 2016-07-26