PTFC270101M_16 Datasheet, PDF (11/22 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700 MHz

PTFC270101M
Typical RF Performance, 920 – 960 MHz (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 120 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
920 IMDL
920 IMDU
940 IMDL
-25
940 IMDU
960 IMDL
960 IMDU
-35
-45
c270101m-900-gr3
24 26 28 30 32 34 36 38 40 42
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 120 mA
26
78
24 _Gain
66
22
54
960 MHz
20
940 MHz
42
920 MHz
18
30
16
14
24
Efficiency
28
32
36
40
Output Power (dBm)
18
c270101m-900-gr4
6
44
Small Signal CW Performance
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 120 mA
24
0
Gain
-5
22
-10
-15
20
-20
18
750
850
-25
Input Return Loss
950
1050
c270101m-900-gr6_v2
-30
1150
Frequency (MHz)
CW Performance
at selected supply voltage
I_DQ = 120 mA, ƒ = 920 MHz
26
78
24 ^Gain
66
22 V_DD = 24 V
54
V_DD = 28 V
20 ^{VDD = 32 V}
42
18
30
16
Efficiency
18
14
24
28
32
36
40
c270101m-900-gr5a
6
44
Output Power (dBm)
Data Sheet
11 of 22
Rev. 04.1, 2016-07-26